Datasheets
IRF7703GPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8

Part Details for IRF7703GPBF by International Rectifier

Results Overview of IRF7703GPBF by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy

IRF7703GPBF Information

IRF7703GPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRF7703GPBF

IRF7703GPBF CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IRF7703GPBF Part Data Attributes

IRF7703GPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF7703GPBF International Rectifier Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TSSOP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-153AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON