Datasheets
IRF7702TRPBF by: International Rectifier

Power Field-Effect Transistor, 8A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8

Part Details for IRF7702TRPBF by International Rectifier

Results Overview of IRF7702TRPBF by International Rectifier

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IRF7702TRPBF Information

IRF7702TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7702TRPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   598
RFQ
Quest Components   478
  • 1 $2.3200
  • 44 $1.1600
  • 173 $0.9280
$0.9280 / $2.3200 Buy Now

Part Details for IRF7702TRPBF

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IRF7702TRPBF Part Data Attributes

IRF7702TRPBF International Rectifier
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IRF7702TRPBF International Rectifier Power Field-Effect Transistor, 8A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TSSOP
Package Description TSSOP-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-153AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Pulsed Drain Current-Max (IDM) 70 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON