Part Details for IRF7702TRPBF by International Rectifier
Results Overview of IRF7702TRPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF7702TRPBF Information
IRF7702TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7702TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 598 |
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RFQ | ||
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Quest Components | 478 |
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$0.9280 / $2.3200 | Buy Now |
Part Details for IRF7702TRPBF
IRF7702TRPBF CAD Models
IRF7702TRPBF Part Data Attributes
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IRF7702TRPBF
International Rectifier
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Datasheet
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Compare Parts:
IRF7702TRPBF
International Rectifier
Power Field-Effect Transistor, 8A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TSSOP | |
Package Description | TSSOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-153AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |