Datasheets
IRF7509PBF by:

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8

Part Details for IRF7509PBF by International Rectifier

Overview of IRF7509PBF by International Rectifier

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Applications Industrial Automation

Part Details for IRF7509PBF

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IRF7509PBF Part Data Attributes:

IRF7509PBF International Rectifier
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IRF7509PBF International Rectifier Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOT
Package Description SMALL OUTLINE, S-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 0.39 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7509PBF

This table gives cross-reference parts and alternative options found for IRF7509PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7509PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7509 Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7509PBF vs IRF7509
IRF7509TR Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7509PBF vs IRF7509TR
IRF7509TR Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7509PBF vs IRF7509TR
Part Number Description Manufacturer Compare
HAT3004R Power Field-Effect Transistor, 0.15ohm, N-Channel and P-Channel, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Hitachi Ltd IRF7509PBF vs HAT3004R
IRF7105PBF Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7509PBF vs IRF7105PBF
IRF9952QPBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7509PBF vs IRF9952QPBF
IRF7106 Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 International Rectifier IRF7509PBF vs IRF7106
IRF7509TR Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7509PBF vs IRF7509TR
NTMD2C02R2SG 5.2A, 20V, 0.043ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 751-07, SOIC-8 Rochester Electronics LLC IRF7509PBF vs NTMD2C02R2SG
IRF7105PBF Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7509PBF vs IRF7105PBF
IRF7317PBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7509PBF vs IRF7317PBF
IRF9952TRPBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7509PBF vs IRF9952TRPBF
NDS9942 3A, 20V, 0.125ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET Texas Instruments IRF7509PBF vs NDS9942

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