Datasheets
IRF7506TR by:

Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Part Details for IRF7506TR by International Rectifier

Overview of IRF7506TR by International Rectifier

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Part Details for IRF7506TR

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IRF7506TR Part Data Attributes

IRF7506TR International Rectifier
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IRF7506TR International Rectifier Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1.7 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 9.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7506TR

This table gives cross-reference parts and alternative options found for IRF7506TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7506TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7506TR Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7506TR vs IRF7506TR
IRF7506TRPBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7506TR vs IRF7506TRPBF
IRF7506 Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TR vs IRF7506
IRF7506TRPBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TR vs IRF7506TRPBF
IRF7506PBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 International Rectifier IRF7506TR vs IRF7506PBF
Part Number Description Manufacturer Compare
IRF7506TR Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7506TR vs IRF7506TR
IRF7104 Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7506TR vs IRF7104
IRF7506TRPBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7506TR vs IRF7506TRPBF
IRF9953TRPBF Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7506TR vs IRF9953TRPBF
IRF9953PBF Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7506TR vs IRF9953PBF
IRF9953TR Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7506TR vs IRF9953TR
IRF7104TR Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7506TR vs IRF7104TR
IRF7506TRPBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7506TR vs IRF7506TRPBF
IRF7104PBF Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7506TR vs IRF7104PBF
IRF7506PBF Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 International Rectifier IRF7506TR vs IRF7506PBF

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