Datasheets
IRF7455TRPBF-1 by:

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7455TRPBF-1 by Infineon Technologies AG

Overview of IRF7455TRPBF-1 by Infineon Technologies AG

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Part Details for IRF7455TRPBF-1

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IRF7455TRPBF-1 Part Data Attributes

IRF7455TRPBF-1 Infineon Technologies AG
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IRF7455TRPBF-1 Infineon Technologies AG Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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