Datasheets
IRF7413ZPBF by:

Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7413ZPBF by International Rectifier

Overview of IRF7413ZPBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF7413ZPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   475
RFQ
Quest Components MOSFET Transistor, N-Channel, SO 44
  • 1 $1.0500
  • 6 $0.8400
  • 25 $0.5250
$0.5250 / $1.0500 Buy Now
Quest Components MOSFET Transistor, N-Channel, SO 380
  • 1 $1.1620
  • 87 $0.5810
  • 345 $0.4648
$0.4648 / $1.1620 Buy Now
Rochester Electronics IRF7413 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 60
  • 1 $0.3646
  • 25 $0.3573
  • 100 $0.3427
  • 500 $0.3281
  • 1,000 $0.3099
$0.3099 / $0.3646 Buy Now

Part Details for IRF7413ZPBF

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IRF7413ZPBF Part Data Attributes:

IRF7413ZPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF7413ZPBF International Rectifier Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 32 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7413ZPBF

This table gives cross-reference parts and alternative options found for IRF7413ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7413ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7413TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7413ZPBF vs IRF7413TR
IRF7413QPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413ZPBF vs IRF7413QPBF
IRF7413PBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7413ZPBF vs IRF7413PBF-1
IRF7413PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413ZPBF vs IRF7413PBF
IRF7413TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, International Rectifier IRF7413ZPBF vs IRF7413TRPBF-1
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7413ZPBF vs IRF7413GPBF
IRF7413TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7413ZPBF vs IRF7413TR
IRF7413PBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, International Rectifier IRF7413ZPBF vs IRF7413PBF-1
IRF7413TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET, Infineon Technologies AG IRF7413ZPBF vs IRF7413TRPBF-1
IRF7413UTRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413ZPBF vs IRF7413UTRPBF
Part Number Description Manufacturer Compare
IRF7471PBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413ZPBF vs IRF7471PBF
BSO304SN Power Field-Effect Transistor, 6.4A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Infineon Technologies AG IRF7413ZPBF vs BSO304SN
PHN1013 TRANSISTOR 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7413ZPBF vs PHN1013
FSS232 Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd IRF7413ZPBF vs FSS232
IRF7842 Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413ZPBF vs IRF7842
PHN1011 TRANSISTOR 11 A, 25 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLATIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7413ZPBF vs PHN1011
STS10NF30L 10A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics IRF7413ZPBF vs STS10NF30L
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7413ZPBF vs IRF7413GPBF
STS8NF30L 8A, 30V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics IRF7413ZPBF vs STS8NF30L
IRF7821TR Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7413ZPBF vs IRF7821TR

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