Datasheets
IRF7413PBF-1 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRF7413PBF-1 by International Rectifier

Overview of IRF7413PBF-1 by International Rectifier

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Part Details for IRF7413PBF-1

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IRF7413PBF-1 Part Data Attributes

IRF7413PBF-1 International Rectifier
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IRF7413PBF-1 International Rectifier Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 260 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 58 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for IRF7413PBF-1

This table gives cross-reference parts and alternative options found for IRF7413PBF-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7413PBF-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7413 Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413ZGPBF
IRF7413PBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7413PBF-1 vs IRF7413PBF-1
IRF7413Z Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413PBF-1 vs IRF7413Z
IRF7413UTRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413UTRPBF
IRF7413PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413PBF
IRF7413Z Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413Z
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413ZGPBF
IRF7413GPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413GPBF
IRF7413TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413TR
Part Number Description Manufacturer Compare
IRF7471TR Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413PBF-1 vs IRF7471TR
IRF7471TRPBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413PBF-1 vs IRF7471TRPBF
2SK2556 Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd IRF7413PBF-1 vs 2SK2556
FDS8858CZ Power Field-Effect Transistor, 8.6A I(D), 30V, 0.017ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 8 PIN Fairchild Semiconductor Corporation IRF7413PBF-1 vs FDS8858CZ
SI4800 TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7413PBF-1 vs SI4800
IRF7460TRPBF Power Field-Effect Transistor, 12A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413PBF-1 vs IRF7460TRPBF
IRF7484PBF Power Field-Effect Transistor, 14A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7484PBF
TPC8002 TRANSISTOR 11 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-6J1B, 8 PIN, FET General Purpose Power Toshiba America Electronic Components IRF7413PBF-1 vs TPC8002
IRF7821TRPBF Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7821TRPBF
STS7NF30L 7A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics IRF7413PBF-1 vs STS7NF30L

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