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Transistors / Power Field-Effect Transistors / IRF7341QTR
Datasheets
IRF7341QTR by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for IRF7341QTR by International Rectifier

Results Overview of IRF7341QTR by International Rectifier

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Applications Industrial Automation Automotive Motor control systems

IRF7341QTR Information

IRF7341QTR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7341QTR

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 5.1A I(D), N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET 17365
  • 1 $2.4680
  • 527 $1.0181
  • 983 $0.9255
$0.9255 / $2.4680 Buy Now
Vyrian Transistors 792
RFQ

Part Details for IRF7341QTR

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IRF7341QTR Part Data Attributes

Parametric Data
IRF7341QTR International Rectifier
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IRF7341QTR International Rectifier Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Drain Current-Max (ID) 5.1 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Moisture Sensitivity Level 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.7 W
Surface Mount YES
Terminal Finish TIN LEAD

IRF7341QTR Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7341QTR is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.

  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate-source voltage (Vgs) within the recommended range of 2V to 4V, and maintain a low impedance path to the drain-source voltage (Vds).

  • The recommended gate resistor value for the IRF7341QTR is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can help reduce electromagnetic interference (EMI), but may increase switching losses.

  • Yes, the IRF7341QTR is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate charge, and parasitic capacitances to ensure optimal performance and minimize electromagnetic interference (EMI).

  • To protect the IRF7341QTR from overvoltage and overcurrent conditions, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent excessive current.