Datasheets
IRF7313PBF by:
Infineon Technologies AG
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7313PBF by Infineon Technologies AG

Results Overview of IRF7313PBF by Infineon Technologies AG

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IRF7313PBF Information

IRF7313PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7313PBF

Part # Distributor Description Stock Price Buy
DISTI # IRF7313PBF-ND
DigiKey MOSFET 2N-CH 30V 6.5A 8SO Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # SP001566122
EBV Elektronik Transistor MOSFET Array Dual NCH 30V 65A 8Pin SOIC Tube (Alt: SP001566122) RoHS: Compliant Min Qty: 3800 Package Multiple: 3800 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET 2N-CH 30V 6.5A 8-SOIC 404
  • 65 $0.8239
  • 150 $0.6761
  • 230 $0.6549
  • 320 $0.6338
  • 410 $0.6127
  • 550 $0.5493
$0.5493 / $0.8239 Buy Now

Part Details for IRF7313PBF

IRF7313PBF CAD Models

IRF7313PBF Part Data Attributes

IRF7313PBF Infineon Technologies AG
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Compare Parts:
IRF7313PBF Infineon Technologies AG Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 82 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 130 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 65 ns
Turn-on Time-Max (ton) 25 ns

Alternate Parts for IRF7313PBF

This table gives cross-reference parts and alternative options found for IRF7313PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7313PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7313 International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7313PBF vs IRF7313
IRF7313PBF International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7313PBF vs IRF7313PBF
IRF7313TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, IRF7313PBF vs IRF7313TRPBF
Part Number Manufacturer Composite Price Description Compare
IRF7313TR International Rectifier Check for Price Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA IRF7313PBF vs IRF7313TR
IRF7313TRPBF Infineon Technologies AG $0.3183 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, IRF7313PBF vs IRF7313TRPBF
FDS6982_NF073 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN IRF7313PBF vs FDS6982_NF073
IRF7313TRPBF-1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET IRF7313PBF vs IRF7313TRPBF-1
FDS6982 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN IRF7313PBF vs FDS6982

IRF7313PBF Related Parts

IRF7313PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7313PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF7313PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF7313PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.

  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.