Datasheets
IRF730B by:

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRF730B by Fairchild Semiconductor Corporation

Overview of IRF730B by Fairchild Semiconductor Corporation

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Price & Stock for IRF730B

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRF730B-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 952 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 238000
In Stock
  • 952 $0.3200
$0.3200 Buy Now
Bristol Electronics   300
RFQ
Quest Components 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2127
  • 1 $0.6090
  • 149 $0.2842
  • 705 $0.2538
$0.2538 / $0.6090 Buy Now
Quest Components 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 240
  • 1 $1.0150
  • 26 $0.6090
  • 100 $0.5075
$0.5075 / $1.0150 Buy Now
Rochester Electronics 5.5A, 400V, 1ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 46000
  • 1 $0.3033
  • 25 $0.2972
  • 100 $0.2851
  • 500 $0.2730
  • 1,000 $0.2578
$0.2578 / $0.3033 Buy Now

Part Details for IRF730B

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IRF730B Part Data Attributes

IRF730B Fairchild Semiconductor Corporation
Buy Now Datasheet
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IRF730B Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 330 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 73 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF730B

This table gives cross-reference parts and alternative options found for IRF730B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF730B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF730B 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF730B vs IRF730B
FQP6N40C Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, TO-220, TO-220-3, 1000-TUBE onsemi IRF730B vs FQP6N40C
Part Number Description Manufacturer Compare
FQP6N40C Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, TO-220, TO-220-3, 1000-TUBE onsemi IRF730B vs FQP6N40C

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