Part Details for IRF7304PBF by Infineon Technologies AG
Results Overview of IRF7304PBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF7304PBF Information
IRF7304PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF7304PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7304PBF-ND
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DigiKey | MOSFET 2P-CH 20V 4.3A 8SO Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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NexGen Digital | 2 |
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RFQ | ||
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DISTI #
SP001561936
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EBV Elektronik | Transistor MOSFET Array Dual PCH 20V 47A 8Pin SOIC Tube (Alt: SP001561936) RoHS: Compliant Min Qty: 3800 Package Multiple: 3800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF7304PBF
IRF7304PBF CAD Models
IRF7304PBF Part Data Attributes
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IRF7304PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7304PBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.4 W | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7304PBF
This table gives cross-reference parts and alternative options found for IRF7304PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7304PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF7304PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | IRF7304PBF vs IRF7304PBF |
| IRF7304 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304PBF vs IRF7304 |
| IRF7304TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304PBF vs IRF7304TRPBF |
| IRF7304 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304PBF vs IRF7304 |
| IRF7304TR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304PBF vs IRF7304TR |
| IRF7304TRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF7304PBF vs IRF7304TRPBF |
| IRF7304PBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET | IRF7304PBF vs IRF7304PBF-1 |
| IRF7304TRPBF-1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET | IRF7304PBF vs IRF7304TRPBF-1 |