Datasheets
IRF6720S2TRPBF by: International Rectifier

Power Field-Effect Transistor, 11A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2

Part Details for IRF6720S2TRPBF by International Rectifier

Results Overview of IRF6720S2TRPBF by International Rectifier

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Applications Energy and Power Systems Renewable Energy

IRF6720S2TRPBF Information

IRF6720S2TRPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF6720S2TRPBF

Part # Distributor Description Stock Price Buy
Quest Components   1498
  • 1 $3.1200
  • 521 $1.7160
  • 1,167 $1.5600
$1.5600 / $3.1200 Buy Now

Part Details for IRF6720S2TRPBF

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IRF6720S2TRPBF Part Data Attributes

IRF6720S2TRPBF International Rectifier
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IRF6720S2TRPBF International Rectifier Power Field-Effect Transistor, 11A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 77 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N2
JESD-609 Code e1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 17 W
Pulsed Drain Current-Max (IDM) 92 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN SILVER COPPER
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON