Part Details for IRF6702M2DTR1PBF by International Rectifier
Overview of IRF6702M2DTR1PBF by International Rectifier
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Part Details for IRF6702M2DTR1PBF
IRF6702M2DTR1PBF CAD Models
IRF6702M2DTR1PBF Part Data Attributes:
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IRF6702M2DTR1PBF
International Rectifier
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Datasheet
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IRF6702M2DTR1PBF
International Rectifier
Power Field-Effect Transistor, 15A I(D), 30V, 0.0066ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-4
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | CHIP CARRIER, R-XBCC-N4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 71 mJ | |
Case Connection | DRAIN | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.0066 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N4 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 130 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |