Part Details for IRF6662TRPBF by International Rectifier
Overview of IRF6662TRPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6662TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-IRF6662TRPBF-ND
|
DigiKey | IRF6662 - 12V-300V N-CHANNEL POW Min Qty: 254 Container: Bulk MARKETPLACE PRODUCT |
9114 In Stock |
|
$1.1900 | Buy Now |
|
Rochester Electronics | IRF6662 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 9114 |
|
$1.0200 / $1.2000 | Buy Now |
Part Details for IRF6662TRPBF
IRF6662TRPBF CAD Models
IRF6662TRPBF Part Data Attributes
|
IRF6662TRPBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRF6662TRPBF
International Rectifier
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | ROHS COMPLIANT, ISOMETRIC-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 39 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8.3 A | |
Drain-source On Resistance-Max | 0.022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 89 W | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | SILVER NICKEL | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6662TRPBF
This table gives cross-reference parts and alternative options found for IRF6662TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6662TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF6662TR1 | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3 | International Rectifier | IRF6662TRPBF vs IRF6662TR1 |
IRF6662PBF | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6662TRPBF vs IRF6662PBF |
IRF6662TRPBF | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6662TRPBF vs IRF6662TRPBF |
IRF6662 | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3 | International Rectifier | IRF6662TRPBF vs IRF6662 |
IRF6662TR1PBF | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6662TRPBF vs IRF6662TR1PBF |