Part Details for IRF6644PBF by International Rectifier
Overview of IRF6644PBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IRF6644PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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Quest Components | 14 |
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$10.0000 / $15.0000 | Buy Now | |
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Quest Components | 524 |
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$9.0000 / $13.5000 | Buy Now |
Part Details for IRF6644PBF
IRF6644PBF CAD Models
IRF6644PBF Part Data Attributes:
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IRF6644PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF6644PBF
International Rectifier
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | CHIP CARRIER, R-XBCC-N3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10.3 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 82 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Silver/Nickel (Ag/Ni) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF6644PBF
This table gives cross-reference parts and alternative options found for IRF6644PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6644PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6644TR1PBF | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6644PBF vs IRF6644TR1PBF |
| IRF6644 | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6644PBF vs IRF6644 |
| IRF6644TRPBF | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | IRF6644PBF vs IRF6644TRPBF |
| IRF6644TRPBF | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6644PBF vs IRF6644TRPBF |
| IRF6644 | Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | Infineon Technologies AG | IRF6644PBF vs IRF6644 |
| IRF6644PBF | Power Field-Effect Transistor, | Infineon Technologies AG | IRF6644PBF vs IRF6644PBF |