Datasheets
IRF6623 by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

Part Details for IRF6623 by International Rectifier

Results Overview of IRF6623 by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF6623 Information

IRF6623 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF6623

Part # Distributor Description Stock Price Buy
Bristol Electronics   3340
RFQ
Bristol Electronics   674
RFQ
Quest Components   2672
  • 1 $3.8700
  • 420 $2.1285
  • 941 $1.9350
$1.9350 / $3.8700 Buy Now

Part Details for IRF6623

IRF6623 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IRF6623 Part Data Attributes

IRF6623 International Rectifier
Buy Now Datasheet
Compare Parts:
IRF6623 International Rectifier Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description ISOMETRIC-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 43 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.0057 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish SILVER NICKEL
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6623

This table gives cross-reference parts and alternative options found for IRF6623. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6623, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF6623 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 IRF6623 vs IRF6623
IRF6623PBF International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 IRF6623 vs IRF6623PBF