Datasheets
IRF6621TRPBF by:

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2

Part Details for IRF6621TRPBF by International Rectifier

Overview of IRF6621TRPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF6621TRPBF

Part # Distributor Description Stock Price Buy
Rochester Electronics IRF6621 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 1
  • 1 $0.4583
  • 25 $0.4491
  • 100 $0.4308
  • 500 $0.4125
  • 1,000 $0.3896
$0.3896 / $0.4583 Buy Now

Part Details for IRF6621TRPBF

IRF6621TRPBF CAD Models

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IRF6621TRPBF Part Data Attributes

IRF6621TRPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF6621TRPBF International Rectifier Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description ROHS COMPLIANT, ISOMETRIC-2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 13 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0091 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N2
JESD-609 Code e4
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish SILVER NICKEL
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF6621TRPBF

This table gives cross-reference parts and alternative options found for IRF6621TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6621TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF6621 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621
IRF6621TR1PBF Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621TR1PBF
IRF6621 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 Infineon Technologies AG IRF6621TRPBF vs IRF6621
IRF6621TR1 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621TR1
IRF6621PBF Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621PBF
Part Number Description Manufacturer Compare
IRF6621 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621
IRF6621TRPBF Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2 Infineon Technologies AG IRF6621TRPBF vs IRF6621TRPBF
IRF6621 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 Infineon Technologies AG IRF6621TRPBF vs IRF6621
IRF6621TR1 Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621TR1
IRF6621TR1PBF Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621TR1PBF
IRF6621PBF Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 International Rectifier IRF6621TRPBF vs IRF6621PBF

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