Part Details for IRF6614TRPBF by Infineon Technologies AG
Overview of IRF6614TRPBF by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6614TRPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4734
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Newark | Mosfet, N-Ch, 40V, 55A, Directfet St-7, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0059Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Infineon IRF6614TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.5800 | Buy Now |
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Sense Electronic Company Limited | SMD | 4200 |
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RFQ |
Part Details for IRF6614TRPBF
IRF6614TRPBF CAD Models
IRF6614TRPBF Part Data Attributes:
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IRF6614TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF6614TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 22 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 12.7 A | |
Drain-source On Resistance-Max | 0.0083 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 200 pF | |
JESD-30 Code | R-XBCC-N3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 102 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6614TRPBF
This table gives cross-reference parts and alternative options found for IRF6614TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6614TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF6614TR1 | Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6614TRPBF vs IRF6614TR1 |
IRF6614TRPBF | Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | IRF6614TRPBF vs IRF6614TRPBF |
IRF6614 | Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | IRF6614TRPBF vs IRF6614 |
IRF6614PBF | Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3 | International Rectifier | IRF6614TRPBF vs IRF6614PBF |
IRF6614PBF | Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3 | Infineon Technologies AG | IRF6614TRPBF vs IRF6614PBF |