Part Details for IRF6603 by International Rectifier
Overview of IRF6603 by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF6603
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4421 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SMT | 2992 |
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$3.1500 / $6.3000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SMT | 2000 |
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$1.6883 / $3.3765 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SMT | 140 |
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$1.8870 / $3.0600 | Buy Now |
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Velocity Electronics | Our Stock | 2708 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 99 |
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$1.2500 / $1.9200 | Buy Now |
Part Details for IRF6603
IRF6603 CAD Models
IRF6603 Part Data Attributes
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IRF6603
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF6603
International Rectifier
Power Field-Effect Transistor, 27A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-2
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | ISOMETRIC-2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 49 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 27 A | |
Drain-source On Resistance-Max | 0.0034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-G2 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | SILVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF6603
This table gives cross-reference parts and alternative options found for IRF6603. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF6603, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF6603PBF | Power Field-Effect Transistor, 27A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS AND REACH COMPLIANT, MT, ISOMETRIC-3 | International Rectifier | IRF6603 vs IRF6603PBF |