Part Details for IRF641 by Vishay Siliconix
Overview of IRF641 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF641
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 400 |
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RFQ | ||
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Quest Components | 18 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 320 |
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$1.9296 / $3.1290 | Buy Now |
Part Details for IRF641
IRF641 CAD Models
IRF641 Part Data Attributes:
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IRF641
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF641
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SILICONIX INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 18 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF641
This table gives cross-reference parts and alternative options found for IRF641. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF641, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF641 | Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF641 vs IRF641 |
| BUK455-200A | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power | NXP Semiconductors | IRF641 vs BUK455-200A |
| IRF642 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF641 vs IRF642 |
| BUZ30A | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRF641 vs BUZ30A |
| BUK456-200A | TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF641 vs BUK456-200A |
| MTP12N20 | 12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF641 vs MTP12N20 |
| IRF642 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF641 vs IRF642 |
| IRF641 | Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF641 vs IRF641 |
| IRF642 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF641 vs IRF642 |
| IRF641 | 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF641 vs IRF641 |