Part Details for IRF640NLPBF by Infineon Technologies AG
Overview of IRF640NLPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF640NLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7350
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Newark | N Channel Mosfet, 200V, 18A, To-262, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF640NLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IRF640NLPBF-ND
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DigiKey | MOSFET N-CH 200V 18A TO262 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
544 In Stock |
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$0.9929 / $1.7800 | Buy Now |
DISTI #
70017531
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.15Ohm, ID 18A, TO-262,PD 150W, VGS +/-20V | Infineon IRF640NLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.0600 | RFQ |
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Rochester Electronics | IRF640 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 3245 |
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$0.7387 / $0.8690 | Buy Now |
DISTI #
SMC-IRF640NLPBF
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1000 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube | 10100 |
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RFQ | |
DISTI #
2576887
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element14 Asia-Pacific | MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant Min Qty: 1 Container: Each | 648 |
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$0.9375 / $1.8824 | Buy Now |
DISTI #
2576887
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Farnell | MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 648 |
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$0.9952 / $2.0305 | Buy Now |
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LCSC | 200V 18A 150m11A10V 150W 4V250uA 1PCSNChannel TO-262-3 MOSFETs ROHS | 11 |
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$0.7268 / $1.1686 | Buy Now |
Part Details for IRF640NLPBF
IRF640NLPBF CAD Models
IRF640NLPBF Part Data Attributes:
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IRF640NLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF640NLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 247 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF640NLPBF
This table gives cross-reference parts and alternative options found for IRF640NLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF640NL | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | Fairchild Semiconductor Corporation | IRF640NLPBF vs IRF640NL |
IRF640NL | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IRF640NLPBF vs IRF640NL |
IRF640NLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | IRF640NLPBF vs IRF640NLPBF |
IRF640NL | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | International Rectifier | IRF640NLPBF vs IRF640NL |