Part Details for IRF640B by Fairchild Semiconductor Corporation
Overview of IRF640B by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF640B
IRF640B CAD Models
IRF640B Part Data Attributes:
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IRF640B
Fairchild Semiconductor Corporation
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Datasheet
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IRF640B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF640B
This table gives cross-reference parts and alternative options found for IRF640B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHW14N50E | TRANSISTOR 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power | NXP Semiconductors | IRF640B vs PHW14N50E |
| PHP191NQ06LT,127 | N-channel TrenchMOS logic level FET@en-us TO-220 3-Pin | Nexperia | IRF640B vs PHP191NQ06LT,127 |
| PHX1N40E | TRANSISTOR 1.75 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power | NXP Semiconductors | IRF640B vs PHX1N40E |
| BFC50 | 23A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | TT Electronics Power and Hybrid / Semelab Limited | IRF640B vs BFC50 |
| BUZ11AF | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF640B vs BUZ11AF |
| BUK9514-55 | TRANSISTOR 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF640B vs BUK9514-55 |
| APT6040BNR | 18A, 600V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | IRF640B vs APT6040BNR |
| APT6045BNR | 17A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | IRF640B vs APT6045BNR |
| PHP3N60E | TRANSISTOR 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF640B vs PHP3N60E |
| APT5027BVR | 20A, 500V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | IRF640B vs APT5027BVR |