Part Details for IRF630STRLPBF by Vishay Siliconix
Overview of IRF630STRLPBF by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF630STRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF630STRLPBFCT-ND
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DigiKey | MOSFET N-CH 200V 9A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1583 In Stock |
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$0.7072 / $1.6300 | Buy Now |
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New Advantage Corporation | Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - TO-263 RoHS: Compliant Min Qty: 1 Package Multiple: 800 | 5600 |
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$0.9200 / $0.9857 | Buy Now |
Part Details for IRF630STRLPBF
IRF630STRLPBF CAD Models
IRF630STRLPBF Part Data Attributes:
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IRF630STRLPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF630STRLPBF
Vishay Siliconix
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SMD-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 36 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF630STRLPBF
This table gives cross-reference parts and alternative options found for IRF630STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF630STRRPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Vishay Intertechnologies | IRF630STRLPBF vs IRF630STRRPBF |
IRF630STRL | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF630STRLPBF vs IRF630STRL |
IRF630S | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF630STRLPBF vs IRF630S |
IRF630S/T3 | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IRF630STRLPBF vs IRF630S/T3 |
SIHF630STRL-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IRF630STRLPBF vs SIHF630STRL-GE3 |
IRF630STRR | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF630STRLPBF vs IRF630STRR |
IRF630ST4 | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | STMicroelectronics | IRF630STRLPBF vs IRF630ST4 |
IRF630STRLPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | International Rectifier | IRF630STRLPBF vs IRF630STRLPBF |
IRF630STRLPBF | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Vishay Intertechnologies | IRF630STRLPBF vs IRF630STRLPBF |
IRF630S | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3 | NXP Semiconductors | IRF630STRLPBF vs IRF630S |