Part Details for IRF630NS by International Rectifier
Results Overview of IRF630NS by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF630NS Information
IRF630NS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF630NS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 39600 |
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Bristol Electronics | 799 |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... more | 639 |
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$0.6960 / $1.7400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... more | 428 |
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$0.6960 / $1.7400 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... more | 320 |
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$2.2309 / $3.6177 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.3A I(D), 200V, 0.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE S... more | 63 |
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$1.4300 / $2.6000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Si... more ECCN: EAR99 RoHS: Not Compliant |
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Part Details for IRF630NS
IRF630NS CAD Models
IRF630NS Part Data Attributes
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IRF630NS
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF630NS
International Rectifier
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 94 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 82 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF630NS
This table gives cross-reference parts and alternative options found for IRF630NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF630NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF630NS vs IRF630NSTRRPBF |
| IRF630NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF630NS vs IRF630NSTRR |
| IRF630NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF630NS vs IRF630NSTRL |
| IRF630NSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF630NS vs IRF630NSPBF |