Datasheets
IRF620B by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Honest Han
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IRF620B by Fairchild Semiconductor Corporation

Results Overview of IRF620B by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IRF620B Information

IRF620B by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF620B

Part # Distributor Description Stock Price Buy
Rochester Electronics 5A, 200V, 0.8ohm, N-Channel Power MOSFET, TO-220AB RoHS: Not Compliant Status: Obsolete Min Qty: 1 90
  • 1 $0.3575
  • 25 $0.3504
  • 100 $0.3360
  • 500 $0.3217
  • 1,000 $0.3039
$0.3039 / $0.3575 Buy Now

Part Details for IRF620B

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IRF620B Part Data Attributes

IRF620B Fairchild Semiconductor Corporation
Buy Now Datasheet
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IRF620B Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 65 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 47 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF620B

This table gives cross-reference parts and alternative options found for IRF620B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF620B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IRF620B vs IPB80N06S2LH5ATMA1
NDB706AL Texas Instruments Check for Price 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB IRF620B vs NDB706AL
IXFK100N25 IXYS Corporation Check for Price Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN IRF620B vs IXFK100N25
MTW33N10E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE IRF620B vs MTW33N10E
IXFH68N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IRF620B vs IXFH68N20
STD7NK30Z STMicroelectronics Check for Price 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 IRF620B vs STD7NK30Z
STD12N06T4 STMicroelectronics Check for Price 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 IRF620B vs STD12N06T4
IRF3710HR International Rectifier Check for Price Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IRF620B vs IRF3710HR
IXFX120N20 IXYS Corporation Check for Price Power Field-Effect Transistor, 120A I(D), 200V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IRF620B vs IXFX120N20
2SK3933-01SJ Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 11A I(D), 500V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IRF620B vs 2SK3933-01SJ

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