Part Details for IRF620 by STMicroelectronics
Results Overview of IRF620 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
IRF620 Information
IRF620 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF620
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 650 |
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$0.5119 / $1.8281 | Buy Now |
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Bristol Electronics | 10 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-220AB | 877 |
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$0.2750 / $0.6600 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-220AB | 520 |
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$0.6338 / $2.4375 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5A I(D),TO-220AB | 8 |
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$1.4400 / $1.8000 | Buy Now |
Part Details for IRF620
IRF620 CAD Models
IRF620 Part Data Attributes
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IRF620
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF620
STMicroelectronics
6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 80 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 210 ns | |
| Turn-on Time-Max (ton) | 165 ns |
Alternate Parts for IRF620
This table gives cross-reference parts and alternative options found for IRF620. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF620, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF620 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF620 vs IRF620 |
IRF620 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF620 is not explicitly stated in the datasheet. However, STMicroelectronics provides a SOA curve in the application note AN440, which shows the maximum allowable voltage and current combinations for the device.
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The junction-to-case thermal resistance (RθJC) for the IRF620 can be calculated using the formula RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for different packages, but not the exact calculation formula.
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The recommended gate drive voltage for the IRF620 is typically between 10V to 15V, depending on the application and required switching speed. However, the datasheet only specifies the maximum gate-source voltage (VGS) as ±20V, without providing a specific recommended value.
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Yes, the IRF620 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations. The datasheet provides some guidance on the device's switching characteristics, but additional analysis and simulation may be required to ensure reliable operation at high frequencies.
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To protect the IRF620 from electrostatic discharge (ESD), it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the device is stored in an ESD-safe environment. Additionally, the datasheet recommends using a gate-source resistor (RGS) to limit the voltage stress on the gate during ESD events.