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Part Details for IRF60B217 by Infineon Technologies AG
Overview of IRF60B217 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF60B217
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
12AC9751
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Newark | Mosfet, N-Ch, 60V, 60A, To-220Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0073Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.7V, Power Rohs Compliant: Yes |Infineon IRF60B217 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1 |
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$0.8100 / $1.7800 | Buy Now |
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DISTI #
2156-IRF60B217-448-ND
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DigiKey | MOSFET N-CH 60V 60A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Bulk MARKETPLACE PRODUCT |
645 In Stock |
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$0.7700 | Buy Now |
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DISTI #
IRF60B217-ND
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DigiKey | MOSFET N-CH 60V 60A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
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$0.6705 / $1.6000 | Buy Now |
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DISTI #
IRF60B217
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Avnet Americas | Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF60B217) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.6258 / $0.7152 | Buy Now |
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DISTI #
942-IRF60B217
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Mouser Electronics | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg RoHS: Compliant | 1253 |
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$0.6700 / $0.6800 | Buy Now |
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Future Electronics | Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.6550 / $0.7800 | Buy Now |
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Future Electronics | Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Container: Tube | 0Tube |
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$0.6550 / $0.7800 | Buy Now |
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Rochester Electronics | Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 2645 |
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$0.6650 / $0.7823 | Buy Now |
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DISTI #
SP001571396
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EBV Elektronik | Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube (Alt: SP001571396) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 60A 9m36A10V 83W 3.7V50uA 1PCSNChannel TO-220AB MOSFETs ROHS | 15 |
|
$0.4049 / $0.6277 | Buy Now |
Part Details for IRF60B217
IRF60B217 CAD Models
IRF60B217 Part Data Attributes:
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IRF60B217
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF60B217
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 124 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 225 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |