Part Details for IRF5850PBF by International Rectifier
Results Overview of IRF5850PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF5850PBF Information
IRF5850PBF by International Rectifier is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF5850PBF
IRF5850PBF CAD Models
IRF5850PBF Part Data Attributes
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IRF5850PBF
International Rectifier
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Datasheet
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IRF5850PBF
International Rectifier
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, TSOP-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TSOP | |
Package Description | HALOGEN AND LEAD FREE, TSOP-6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.2 A | |
Drain-source On Resistance-Max | 0.135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.96 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF5850PBF
This table gives cross-reference parts and alternative options found for IRF5850PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5850PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FDC6308P | Rochester Electronics LLC | Check for Price | 1700mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | IRF5850PBF vs FDC6308P |
IRF5850TR | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | IRF5850PBF vs IRF5850TR |
IRF5850 | International Rectifier | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | IRF5850PBF vs IRF5850 |
FDC6308P | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | IRF5850PBF vs FDC6308P |