Part Details for IRF5802TRPBF by International Rectifier
Overview of IRF5802TRPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF5802TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 6 | 2770 |
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$0.2438 / $0.9375 | Buy Now |
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Bristol Electronics | 2770 |
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RFQ | ||
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Bristol Electronics | 104 |
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RFQ | ||
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Quest Components | 0.9 A, 150 V, 1.2 OHM, N-CHANNEL, SI, POWER, MOSFET, TSOP-6 | 2216 |
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$0.3250 / $1.2500 | Buy Now |
Part Details for IRF5802TRPBF
IRF5802TRPBF CAD Models
IRF5802TRPBF Part Data Attributes
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IRF5802TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF5802TRPBF
International Rectifier
Small Signal Field-Effect Transistor, 0.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN AND LEAD FREE, TSOP-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TSOP | |
| Package Description | HALOGEN AND LEAD FREE, TSOP-6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 9.5 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 0.9 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 7 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |