Datasheets
IRF5800PBF by:

Power Field-Effect Transistor, 4A I(D), 30V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP-6

Part Details for IRF5800PBF by International Rectifier

Overview of IRF5800PBF by International Rectifier

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Part Details for IRF5800PBF

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IRF5800PBF Part Data Attributes:

IRF5800PBF International Rectifier
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IRF5800PBF International Rectifier Power Field-Effect Transistor, 4A I(D), 30V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TSOP
Package Description HALOGEN FREE AND LEAD FREE, TSOP-6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 20.6 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5800PBF

This table gives cross-reference parts and alternative options found for IRF5800PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5800PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5800PBF Power Field-Effect Transistor, 4A I(D), 30V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP-6 Infineon Technologies AG IRF5800PBF vs IRF5800PBF
Part Number Description Manufacturer Compare
IRF5800PBF Power Field-Effect Transistor, 4A I(D), 30V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP-6 Infineon Technologies AG IRF5800PBF vs IRF5800PBF

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