Datasheets
IRF540ZPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF540ZPBF by International Rectifier

Results Overview of IRF540ZPBF by International Rectifier

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IRF540ZPBF Information

IRF540ZPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF540ZPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 4 415
  • 4 $1.3125
  • 17 $0.8531
  • 60 $0.4922
  • 205 $0.4200
$0.4200 / $1.3125 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,34A I(D),TO-220AB 332
  • 1 $1.7500
  • 15 $0.8750
  • 70 $0.5250
$0.5250 / $1.7500 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,34A I(D),TO-220AB 3
  • 1 $0.9450
$0.9450 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Stock DE - 40
Stock ES - 1030
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF540ZPBF

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IRF540ZPBF Part Data Attributes

IRF540ZPBF International Rectifier
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IRF540ZPBF International Rectifier Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.0265 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 91 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540ZPBF

This table gives cross-reference parts and alternative options found for IRF540ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRF540Z International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 IRF540ZPBF vs AUIRF540Z
IRF540ZPBF Infineon Technologies AG $0.6045 Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF540ZPBF vs IRF540ZPBF
Part Number Manufacturer Composite Price Description Compare
IRF540ZL International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN IRF540ZPBF vs IRF540ZL
AUIRF540ZS International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF540ZPBF vs AUIRF540ZS
AUIRF540ZSTRL International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF540ZPBF vs AUIRF540ZSTRL
IRF540ZLPBF International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN IRF540ZPBF vs IRF540ZLPBF
IRF540ZS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF540ZPBF vs IRF540ZS
IRF540ZS International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF540ZPBF vs IRF540ZS
IRF540ZSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF540ZPBF vs IRF540ZSTRLPBF
IRF540ZSTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF540ZPBF vs IRF540ZSTRRPBF
AUIRF540ZSTRR International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF540ZPBF vs AUIRF540ZSTRR
AUIRF540ZSTRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF540ZPBF vs AUIRF540ZSTRR

IRF540ZPBF Related Parts

IRF540ZPBF Frequently Asked Questions (FAQ)

  • The maximum junction temperature of IRF540ZPBF is 175°C. While the datasheet specifies a maximum operating temperature of 150°C, the device can withstand up to 175°C for short periods of time.

  • Yes, IRF540ZPBF can be used in high-frequency switching applications up to 1 MHz. However, the device's performance may degrade at higher frequencies due to increased switching losses and parasitic capacitances.

  • To ensure safe operating area (SOA) for IRF540ZPBF, follow the guidelines in the datasheet for voltage and current ratings, and ensure that the device is operated within the recommended temperature range. Additionally, consider using a gate driver with a suitable voltage rating and a heat sink to prevent overheating.

  • The recommended gate drive voltage for IRF540ZPBF is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and electromagnetic interference (EMI).

  • While IRF540ZPBF is primarily designed for switching applications, it can be used in linear mode with some limitations. However, the device's performance may not be optimal, and it may not be suitable for high-power linear applications.