Datasheets
IRF540NSPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF540NSPBF by International Rectifier

Results Overview of IRF540NSPBF by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF540NSPBF Information

IRF540NSPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF540NSPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   408
RFQ
Bristol Electronics   62
RFQ
Bristol Electronics   40
RFQ
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock DE - 343
Stock ES - 784
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF540NSPBF

IRF540NSPBF CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IRF540NSPBF Part Data Attributes

IRF540NSPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF540NSPBF International Rectifier Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 185 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540NSPBF

This table gives cross-reference parts and alternative options found for IRF540NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF540NSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NSTRLPBF
IRF540NSTRL International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NSTRL
IRF540NS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NS
IRF540NSTRLPBF Infineon Technologies AG $0.6732 Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NSTRLPBF
IRF540NS International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NS
IRF540NSPBF Infineon Technologies AG $0.9759 Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NSPBF
IRF540NSTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF540NSTRRPBF
Part Number Manufacturer Composite Price Description Compare
IRF2807STRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF2807STRRPBF
IRF1404PBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 IRF540NSPBF vs IRF1404PBF
AUIRFS4610 International Rectifier Check for Price Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF540NSPBF vs AUIRFS4610
MTD8N06E Motorola Mobility LLC Check for Price 8A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 IRF540NSPBF vs MTD8N06E
MTD5N05 Motorola Mobility LLC Check for Price 5A, 50V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 IRF540NSPBF vs MTD5N05
AUIRF2805 International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 IRF540NSPBF vs AUIRF2805
MTW36N10E Motorola Mobility LLC Check for Price 36A, 100V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 IRF540NSPBF vs MTW36N10E
IRF1405ZSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF1405ZSTRLPBF
SUM110N10-08 Vishay Siliconix Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, IRF540NSPBF vs SUM110N10-08
IRF1405STRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 IRF540NSPBF vs IRF1405STRLPBF

IRF540NSPBF Related Parts

IRF540NSPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF540NSPBF is -55°C to 175°C.

  • Yes, the IRF540NSPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.

  • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow around the device.

  • The recommended gate drive voltage for the IRF540NSPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • No, the IRF540NSPBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics. It's designed for switching applications only.