Datasheets
IRF540N by:
Intersil Corporation
Fairchild Semiconductor Corporation
Honest Han
Infineon Technologies AG
International Rectifier
Intersil Corporation
Motorola Mobility LLC
Motorola Semiconductor Products
New Jersey Semiconductor Products Inc
Osensa Innovations Corp
SPC Multicomp
TT Electronics Resistors
Not Found

33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRF540N by Intersil Corporation

Results Overview of IRF540N by Intersil Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF540N Information

IRF540N by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF540N

Part # Distributor Description Stock Price Buy
Bristol Electronics   10
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,27A I(D),TO-220AB 8
  • 1 $2.4800
  • 3 $1.8600
$1.8600 / $2.4800 Buy Now

Part Details for IRF540N

IRF540N CAD Models

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IRF540N Part Data Attributes

IRF540N Intersil Corporation
Buy Now Datasheet
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IRF540N Intersil Corporation 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 120 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF540N

This table gives cross-reference parts and alternative options found for IRF540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF510-006 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF540N vs IRF510-006
IRF510 onsemi Check for Price IRF510 IRF540N vs IRF510
IRF512 National Semiconductor Corporation Check for Price TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4.9A I(D),TO-220AB IRF540N vs IRF512
IRF510 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF540N vs IRF510
Part Number Manufacturer Composite Price Description Compare
IRF510 Rochester Electronics LLC Check for Price 5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF540N vs IRF510
IRF512 Rochester Electronics LLC Check for Price 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF540N vs IRF512
IRF510-009 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF540N vs IRF510-009
RFP2N10 Rochester Electronics LLC Check for Price 2A, 100V, 1.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF540N vs RFP2N10
IRF512 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF540N vs IRF512
IRF510PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN IRF540N vs IRF510PBF
IRF513 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF540N vs IRF513
IRF510 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF540N vs IRF510
IRF511 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF540N vs IRF511
IRF510 Texas Instruments Check for Price 5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IRF540N vs IRF510

IRF540N Related Parts

IRF540N Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF540N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.

  • To calculate the junction temperature (Tj) of the IRF540N, you can use the following formula: Tj = Tc + (RθJA * Pd), where Tc is the case temperature, RθJA is the thermal resistance from junction to ambient, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.

  • The recommended gate drive voltage for the IRF540N is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.

  • Yes, the IRF540N can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean and fast switching signal. Additionally, the layout and PCB design should be optimized to minimize parasitic inductances and capacitances.

  • To protect the IRF540N from overvoltage and overcurrent conditions, you can use a combination of voltage clamping devices, such as zener diodes or TVS diodes, and current sensing resistors or fuses. Additionally, consider implementing overvoltage and overcurrent protection circuits, such as a crowbar circuit or an overcurrent detection circuit, to prevent damage to the device.