Part Details for IRF532 by Harris Semiconductor
Overview of IRF532 by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF532
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 2 |
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$2.3520 / $3.1360 | Buy Now |
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Rochester Electronics | 12A, 100V, 0.23ohm, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 195 |
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$1.1200 / $1.3200 | Buy Now |
Part Details for IRF532
IRF532 CAD Models
IRF532 Part Data Attributes
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IRF532
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRF532
Harris Semiconductor
Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 79 W | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 71 ns | |
| Turn-on Time-Max (ton) | 66 ns |
Alternate Parts for IRF532
This table gives cross-reference parts and alternative options found for IRF532. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF532, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF533 | Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF532 vs IRF533 |
| IRF531 | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF532 vs IRF531 |
| BUZ20 | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | IRF532 vs BUZ20 |
| MTP10N08 | Power Field-Effect Transistor, 10A I(D), 80V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF532 vs MTP10N08 |
| MTP12N10E | 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | onsemi | IRF532 vs MTP12N10E |
| IRF533 | 12A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF532 vs IRF533 |
| IRF532 | 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF532 vs IRF532 |
| RFP12N08 | 12A, 80V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF532 vs RFP12N08 |
| MTP10N08 | 10A, 80V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF532 vs MTP10N08 |
| IRF533 | Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF532 vs IRF533 |