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Discrete MOSFETs, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
71AC3005
|
Newark | Mosfet, N-Ch, 100V, 14A, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:14A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.11Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Onsemi IRF530A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.5600 / $1.2500 | Buy Now |
DISTI #
58K1735
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Newark | N Channel Mosfet, 100V, 14A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:100V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Onsemi IRF530A Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.7270 / $0.7370 | Buy Now |
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IRF530A
onsemi
Buy Now
Datasheet
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IRF530A
onsemi
Discrete MOSFETs, 1000-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 21 Weeks, 5 Days | |
Date Of Intro | 1999-06-06 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 261 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF530A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF530A | Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF530A vs IRF530A |
IRF530A | 14A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | IRF530A vs IRF530A |
IRF530A | Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF530A vs IRF530A |