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14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4 |
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RFQ | ||
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Bristol Electronics | Min Qty: 5 | 36 |
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$0.7313 / $1.1250 | Buy Now |
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 61 |
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$0.5000 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 74 |
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$0.7500 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 28 |
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$0.7500 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 1 |
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$2.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 16 |
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$1.4875 / $2.3800 | Buy Now |
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Chip1Cloud | MOSFET N-CH 100V 14A TO-220 / N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | 950 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 100V 14A TO-220 / N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | 93221 |
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$0.4300 / $0.6450 | Buy Now |
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IRF530
STMicroelectronics
Buy Now
Datasheet
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IRF530
STMicroelectronics
14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 110 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 115 ns |
This table gives cross-reference parts and alternative options found for IRF530. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF530PBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF530 vs IRF530PBF |
IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF530 vs IRF530 |
IRF530 | 14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF530 vs IRF530 |
IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF530 vs IRF530 |
IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF530 vs IRF530 |
IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Intertechnologies | IRF530 vs IRF530 |
IRF530 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRF530 vs IRF530 |
IRF530PBF | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF530 vs IRF530PBF |
IRF530FP | 10A, 600V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FP, 3 PIN | STMicroelectronics | IRF530 vs IRF530FP |
IRF530 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | Microsemi Corporation | IRF530 vs IRF530 |