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Transistors / Power Field-Effect Transistors / IRF5210L
Datasheets
IRF5210L by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Part Details for IRF5210L by International Rectifier

Results Overview of IRF5210L by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy

IRF5210L Information

IRF5210L by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF5210L

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,P-CHANNEL,100V V(BR)DSS,40A I(D),TO-262 78
  • 1 $9.2925
  • 12 $6.1950
  • 41 $5.7304
$5.7304 / $9.2925 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 49
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF5210L

IRF5210L CAD Models

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IRF5210L Part Data Attributes

Parametric Data
IRF5210L International Rectifier
Buy Now Datasheet
Compare Parts:
IRF5210L International Rectifier Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5210L

This table gives cross-reference parts and alternative options found for IRF5210L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF5210LHR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF5210L vs IRF5210LHR
IRF5210L Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF5210L vs IRF5210L
IRF5210LPBF International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN IRF5210L vs IRF5210LPBF
Part Number Manufacturer Composite Price Description Compare
IRF5210-015PBF International Rectifier Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF5210L vs IRF5210-015PBF
IRF5210-019 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRF5210L vs IRF5210-019
IRF5210-009PBF Infineon Technologies AG Check for Price 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF5210L vs IRF5210-009PBF
IRF5210-031PBF International Rectifier Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF5210L vs IRF5210-031PBF
IRF5210-004 International Rectifier Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF5210L vs IRF5210-004
IRF5210-030PBF Infineon Technologies AG Check for Price 35A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF5210L vs IRF5210-030PBF
AUIRF5210STRL International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 IRF5210L vs AUIRF5210STRL
IRF5210-002 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, IRF5210L vs IRF5210-002
IRF5210-002PBF International Rectifier Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF5210L vs IRF5210-002PBF
IRF5210-030 International Rectifier Check for Price Power Field-Effect Transistor, 35A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF5210L vs IRF5210-030