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Transistors / Power Field-Effect Transistors / IRF520N
Datasheets
IRF520N by:
International Rectifier
Hongxing Electrical Ltd
Infineon Technologies AG
International Rectifier
Motorola Mobility LLC
Motorola Semiconductor Products
Not Found

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF520N by International Rectifier

Results Overview of IRF520N by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF520N Information

IRF520N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF520N

Part # Distributor Description Stock Price Buy
Quest Components 9.7 A, 100 V, 0.2 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB 292
  • 1 $1.1925
  • 16 $0.7155
  • 71 $0.5565
$0.5565 / $1.1925 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 950
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRF520N

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IRF520N Part Data Attributes

Parametric Data
IRF520N International Rectifier
Buy Now Datasheet
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IRF520N International Rectifier Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 91 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.7 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 47 W
Pulsed Drain Current-Max (IDM) 38 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF520N

This table gives cross-reference parts and alternative options found for IRF520N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF520N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF533 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF520N vs IRF533
IRF531 TT Electronics Power and Hybrid / Semelab Limited Check for Price 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IRF520N vs IRF531
BUZ20 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF520N vs BUZ20
RFP12N08 Harris Semiconductor Check for Price Power Field-Effect Transistor, 12A I(D), 80V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA IRF520N vs RFP12N08
MTP10N10 Motorola Mobility LLC Check for Price 10A, 100V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs MTP10N10
BUZ72 Siemens Check for Price Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF520N vs BUZ72
IRF530 Motorola Mobility LLC Check for Price 14A, 100V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN IRF520N vs IRF530
RFP12N08 Rochester Electronics LLC Check for Price 12A, 80V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA IRF520N vs RFP12N08
IRF532 Motorola Mobility LLC Check for Price 12A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs IRF532
Part Number Manufacturer Composite Price Description Compare
IRF520N Motorola Mobility LLC Check for Price 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs IRF520N
BUK453-100B NXP Semiconductors Check for Price TRANSISTOR 13 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power IRF520N vs BUK453-100B
IRF533 Harris Semiconductor Check for Price Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF520N vs IRF533
MTP12N10E Motorola Mobility LLC Check for Price 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs MTP12N10E
IRF531 Motorola Mobility LLC Check for Price 14A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs IRF531
IRF530 International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF520N vs IRF530
IRF533 Motorola Mobility LLC Check for Price 12A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs IRF533
IRF532 Intersil Corporation Check for Price 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF520N vs IRF532
MTP12N10E onsemi Check for Price 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN IRF520N vs MTP12N10E
RFP12N10 Rochester Electronics LLC Check for Price 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA IRF520N vs RFP12N10

IRF520N Related Parts

IRF520N Frequently Asked Questions (FAQ)

  • The maximum voltage that can be applied to the gate of the IRF520N is ±20V. Exceeding this voltage can damage the device.

  • No, the IRF520N is a low-side switch, meaning it can only be used to switch the low side of a load. It is not suitable for high-side switching applications.

  • The minimum voltage required to fully turn on the IRF520N is around 4.5V. However, it's recommended to use a gate voltage of at least 10V to ensure the device is fully enhanced.

  • No, the IRF520N is designed to switch DC loads only. It is not suitable for switching AC loads due to its internal body diode and lack of anti-parallel diode.

  • The maximum current that the IRF520N can handle is 9.2A. However, this is a pulsed current rating, and the device may not be able to handle continuous currents above 5A.