Datasheets
IRF510STRRPBF by:
Vishay Intertechnologies
International Rectifier
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3

Part Details for IRF510STRRPBF by Vishay Intertechnologies

Results Overview of IRF510STRRPBF by Vishay Intertechnologies

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IRF510STRRPBF Information

IRF510STRRPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF510STRRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF510STRRPBF
Avnet Americas MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRF510STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Reel 0
  • 800 $0.5375
  • 1,600 $0.5289
  • 3,200 $0.5206
  • 4,800 $0.5119
  • 6,400 $0.5059
$0.5059 / $0.5375 Buy Now
DISTI # 844-IRF510STRRPBF
Mouser Electronics MOSFETs TO263 100V 5.6A N-CH MOSFET RoHS: Compliant 863
  • 1 $1.4500
  • 10 $1.1700
  • 100 $0.8500
  • 500 $0.8450
  • 800 $0.5980
  • 2,400 $0.5500
  • 4,800 $0.5340
$0.5340 / $1.4500 Buy Now
DISTI # V72:2272_09218866
Arrow Electronics Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 24 Weeks Date Code: 1926 Container: Cut Strips Americas - 9
  • 1 $0.5772
$0.5772 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 0
  • 800 $0.6310
  • 1,600 $0.6220
  • 2,400 $0.6170
  • 3,200 $0.6130
  • 4,000 $0.6020
$0.6020 / $0.6310 Buy Now
DISTI # 66386441
Verical Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R Min Qty: 59 Package Multiple: 1 Date Code: 2136 Americas - 570
  • 59 $0.3850
$0.3850 Buy Now
DISTI # IRF510STRRPBF
TTI MOSFETs TO263 100V 5.6A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $0.5680
  • 1,600 $0.5570
  • 2,400 $0.5460
  • 4,000 $0.5350
  • 6,400 $0.5240
$0.5240 / $0.5680 Buy Now
DISTI # IRF510STRRPBF
TME Transistor: N-MOSFET, unipolar, 100V, 5.6A, Idm: 20A, 43W Min Qty: 1 0
  • 1 $0.7550
  • 10 $0.5490
  • 100 $0.4850
  • 800 $0.4360
$0.4360 / $0.7550 RFQ
DISTI # C1S803605318224
Chip One Stop Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 570
  • 1 $0.5310
  • 10 $0.3850
$0.3850 / $0.5310 Buy Now
DISTI # IRF510STRRPBF
EBV Elektronik MOSFET NCHANNEL 100V (Alt: IRF510STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 25 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF510STRRPBF

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IRF510STRRPBF Part Data Attributes

IRF510STRRPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRF510STRRPBF Vishay Intertechnologies Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 24 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 43 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF510STRRPBF

This table gives cross-reference parts and alternative options found for IRF510STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF510STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF510SPBF Vishay Intertechnologies $0.5416 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRRPBF vs IRF510SPBF
Part Number Manufacturer Composite Price Description Compare
IRF510S Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF510STRRPBF vs IRF510S

IRF510STRRPBF Related Parts

IRF510STRRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF510STRRPBF is -55°C to 150°C.

  • No, the IRF510STRRPBF is a standard MOSFET and requires a higher gate-source voltage (typically 10V) to fully turn on.

  • The maximum current rating for the IRF510STRRPBF is 5.6A.

  • The IRF510STRRPBF has a relatively high gate-drain capacitance, which may limit its suitability for high-frequency switching applications. It's recommended to use a MOSFET with lower capacitance for high-frequency applications.

  • The IRF510STRRPBF is not recommended for linear amplifier applications due to its high drain-source resistance (RDS(on)) and limited safe operating area (SOA). A MOSFET with lower RDS(on) and a larger SOA is recommended for linear amplifier applications.