Datasheets
IRF510STRLPBF by:
Vishay Siliconix
International Rectifier
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3

Part Details for IRF510STRLPBF by Vishay Siliconix

Results Overview of IRF510STRLPBF by Vishay Siliconix

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IRF510STRLPBF Information

IRF510STRLPBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF510STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF510STRLPBFCT-ND
DigiKey MOSFET N-CH 100V 5.6A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 198
In Stock
  • 1 $1.7700
  • 10 $1.1930
  • 100 $0.8670
  • 800 $0.6314
  • 1,600 $0.5911
  • 2,400 $0.5508
  • 4,000 $0.5503
  • 5,600 $0.5375
$0.5375 / $1.7700 Buy Now

Part Details for IRF510STRLPBF

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IRF510STRLPBF Part Data Attributes

IRF510STRLPBF Vishay Siliconix
Buy Now Datasheet
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IRF510STRLPBF Vishay Siliconix Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description ROHS COMPLIANT, TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF510STRLPBF

This table gives cross-reference parts and alternative options found for IRF510STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF510STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF510S International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF510STRLPBF vs IRF510S
IRF510STRRPBF Vishay Intertechnologies $0.4634 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRLPBF vs IRF510STRRPBF
IRF510STRL Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 IRF510STRLPBF vs IRF510STRL
Part Number Manufacturer Composite Price Description Compare
IRF510STRLPBF Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRLPBF vs IRF510STRLPBF
IRF510SPBF Vishay Intertechnologies $0.5416 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRLPBF vs IRF510SPBF
IRF510STRRPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 IRF510STRLPBF vs IRF510STRRPBF
IRF510STRL Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IRF510STRLPBF vs IRF510STRL
IRF510STRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRLPBF vs IRF510STRRPBF
IRF510STRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRLPBF vs IRF510STRLPBF
IRF510S Motorola Mobility LLC Check for Price 4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF510STRLPBF vs IRF510S
IRF510SPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 IRF510STRLPBF vs IRF510SPBF
IRF510SPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 IRF510STRLPBF vs IRF510SPBF
IRF510S Vishay Siliconix Check for Price Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 IRF510STRLPBF vs IRF510S

IRF510STRLPBF Related Parts

IRF510STRLPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF510STRLPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 2V to 4V for the IRF510STRLPBF. This will allow the MOSFET to operate in the saturation region and provide the best possible performance.

  • The maximum current rating for the IRF510STRLPBF is 5.6A, but it's recommended to derate the current to 4.5A or less for continuous operation to ensure reliability and prevent overheating.

  • To handle thermal management, ensure good heat sinking, such as using a heat sink with a thermal resistance of 10°C/W or less, and provide adequate airflow. You can also consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.

  • While the IRF510STRLPBF can be used for high-frequency switching applications, its performance may be limited by its relatively high gate charge (Qg) and output capacitance (Coss). For high-frequency applications, consider using a MOSFET with lower Qg and Coss, such as the IRF510N or IRF520N.