Part Details for IRF450 by Motorola Mobility LLC
Results Overview of IRF450 by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF450 Information
IRF450 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF450
IRF450 CAD Models
IRF450 Part Data Attributes
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IRF450
Motorola Mobility LLC
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Datasheet
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IRF450
Motorola Mobility LLC
13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 200 pF | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 220 ns | |
| Turn-on Time-Max (ton) | 85 ns |
Alternate Parts for IRF450
This table gives cross-reference parts and alternative options found for IRF450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF451 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | IRF450 vs IRF451 |
| IRF450R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | IRF450 vs IRF450R1 |
| 2N6770 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | IRF450 vs 2N6770 |
| IRF451 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF450 vs IRF451 |
| IRF450 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | IRF450 vs IRF450 |
| IRF451 | Intersil Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,13A I(D),TO-3 | IRF450 vs IRF451 |
| JANTX2N6770 | Omnirel Corp | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | IRF450 vs JANTX2N6770 |
| JANTXV2N6770 | Motorola Mobility LLC | Check for Price | 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF450 vs JANTXV2N6770 |
| IRF451 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | IRF450 vs IRF451 |
| IRF451 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF450 vs IRF451 |
IRF450 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF450 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF450 can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides a thermal resistance value of 0.5°C/W for the IRF450, which can be used to estimate the junction temperature.
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The recommended gate drive voltage for the IRF450 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the device's switching performance, but it may also increase the risk of gate oxide breakdown.
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Yes, the IRF450 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF450 has a relatively high gate charge, which may limit its suitability for very high-frequency applications. Additionally, the device's parasitic capacitances and inductances should be taken into account to ensure stable operation.
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To protect the IRF450 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Additionally, the device's voltage and current ratings should be carefully monitored, and the device should be operated within its specified safe operating area.