Datasheets
IRF4104SPBF by:

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF4104SPBF by International Rectifier

Overview of IRF4104SPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF4104SPBF

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 40V, 0.0055OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 25
  • 1 $1.5283
  • 4 $1.4060
  • 19 $1.2226
$1.2226 / $1.5283 Buy Now
Rochester Electronics IRF4104 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 3
  • 1 $0.9910
  • 25 $0.9712
  • 100 $0.9315
  • 500 $0.8919
  • 1,000 $0.8423
$0.8423 / $0.9910 Buy Now
Chip 1 Exchange INSTOCK 200
RFQ

Part Details for IRF4104SPBF

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IRF4104SPBF Part Data Attributes

IRF4104SPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF4104SPBF International Rectifier Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 220 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 470 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF4104SPBF

This table gives cross-reference parts and alternative options found for IRF4104SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF4104SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF4104STRRPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF4104SPBF vs IRF4104STRRPBF
IRF4104SPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF4104SPBF vs IRF4104SPBF
IRF4104STRRPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs IRF4104STRRPBF
Part Number Description Manufacturer Compare
IRL1104STRRPBF Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs IRL1104STRRPBF
IRF4104STRRPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF4104SPBF vs IRF4104STRRPBF
IRL1104STRRPBF Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF4104SPBF vs IRL1104STRRPBF
AUIRL1404ZSTRL Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs AUIRL1404ZSTRL
IRL1404ZSPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs IRL1404ZSPBF
IRL1104STRLPBF Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs IRL1104STRLPBF
IRL1404ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs IRL1404ZSTRLPBF
IRL1404ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF4104SPBF vs IRL1404ZSTRLPBF
IRL1404ZSTRR Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRF4104SPBF vs IRL1404ZSTRR
IRF4104STRR Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF4104SPBF vs IRF4104STRR

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