Part Details for IRF3710ZSTRLPBF by Infineon Technologies AG
Overview of IRF3710ZSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF3710ZSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
32AC7469
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Newark | Mosfet, N-Ch, 100V, 59A, 175Deg C, 160W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:59A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF3710ZSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 24 |
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$1.4500 / $2.1100 | Buy Now |
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DISTI #
86AK5354
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Newark | Mosfet, N-Ch, 100V, 59A, To-263 Rohs Compliant: Yes |Infineon IRF3710ZSTRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8500 / $1.0100 | Buy Now |
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DISTI #
IRF3710ZSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 59A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17963 In Stock |
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$0.8178 / $1.8800 | Buy Now |
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DISTI #
IRF3710ZSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3710ZSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 5600 |
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$0.7381 / $0.8962 | Buy Now |
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DISTI #
32AC7469
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Avnet Americas | Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 32AC7469) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Ammo Pack | 24 Partner Stock |
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$1.4500 / $2.0600 | Buy Now |
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DISTI #
942-IRF3710ZSTRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 59A 18mOhm 82nC Qg RoHS: Compliant | 623 |
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$0.8170 / $1.8300 | Buy Now |
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Future Electronics | Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.7000 / $0.7550 | Buy Now |
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Future Electronics | Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.8250 / $0.8950 | Buy Now |
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DISTI #
78970564
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Verical | Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2411 | Americas - 10400 |
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$0.7494 / $0.8208 | Buy Now |
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DISTI #
69268172
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Verical | Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK T/R Min Qty: 28 Package Multiple: 1 Date Code: 2323 | Americas - 3200 |
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$0.9075 / $1.1200 | Buy Now |
Part Details for IRF3710ZSTRLPBF
IRF3710ZSTRLPBF CAD Models
IRF3710ZSTRLPBF Part Data Attributes:
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IRF3710ZSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3710ZSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF3710ZSTRLPBF
This table gives cross-reference parts and alternative options found for IRF3710ZSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710ZSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF3710ZSTRR | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSTRLPBF vs IRF3710ZSTRR |
| AUIRF3710ZSTRR | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Infineon Technologies AG | IRF3710ZSTRLPBF vs AUIRF3710ZSTRR |
| IRF3710ZSPBF | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSTRLPBF vs IRF3710ZSPBF |
| IRF3710ZSTRRPBF | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSTRLPBF vs IRF3710ZSTRRPBF |
| AUIRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | International Rectifier | IRF3710ZSTRLPBF vs AUIRF3710ZS |
| IRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSTRLPBF vs IRF3710ZS |
| IRF3710ZSPBF | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF3710ZSTRLPBF vs IRF3710ZSPBF |
| IRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF3710ZSTRLPBF vs IRF3710ZS |
| AUIRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Infineon Technologies AG | IRF3710ZSTRLPBF vs AUIRF3710ZS |