Part Details for IRF3710ZSPBF by Infineon Technologies AG
Overview of IRF3710ZSPBF by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRF3710ZSPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF3710ZSPBF-ND
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DigiKey | MOSFET N-CH 100V 59A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IRF3710 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 66 |
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$0.9049 / $1.0600 | Buy Now |
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Chip1Cloud | MOSFET N-CH 100V 59A D2PAK | 25 |
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RFQ | |
DISTI #
1013376
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element14 Asia-Pacific | MOSFET, N, D2-PAK RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$1.2593 / $2.3124 | Buy Now |
DISTI #
1013376
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Farnell | MOSFET, N, D2-PAK RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Each | 0 |
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$1.1796 / $2.2618 | Buy Now |
Part Details for IRF3710ZSPBF
IRF3710ZSPBF CAD Models
IRF3710ZSPBF Part Data Attributes
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IRF3710ZSPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF3710ZSPBF
Infineon Technologies AG
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 59 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF3710ZSPBF
This table gives cross-reference parts and alternative options found for IRF3710ZSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710ZSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF3710ZSTRR | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSPBF vs IRF3710ZSTRR |
AUIRF3710ZSTRR | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Infineon Technologies AG | IRF3710ZSPBF vs AUIRF3710ZSTRR |
IRF3710ZSPBF | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSPBF vs IRF3710ZSPBF |
IRF3710ZSTRRPBF | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSPBF vs IRF3710ZSTRRPBF |
AUIRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | International Rectifier | IRF3710ZSPBF vs AUIRF3710ZS |
IRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF3710ZSPBF vs IRF3710ZS |
IRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF3710ZSPBF vs IRF3710ZS |
AUIRF3710ZS | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | Infineon Technologies AG | IRF3710ZSPBF vs AUIRF3710ZS |