Datasheets
IRF3710 by:

Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

Part Details for IRF3710 by International Rectifier

Overview of IRF3710 by International Rectifier

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Price & Stock for IRF3710

Part # Distributor Description Stock Price Buy
Bristol Electronics   207
RFQ
Bristol Electronics   41
RFQ
Bristol Electronics   Min Qty: 2 8
  • 2 $3.0000
$3.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 47
  • 1 $1.5000
  • 4 $1.2500
  • 13 $0.9000
$0.9000 / $1.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 153
  • 1 $2.5000
  • 11 $1.5000
  • 41 $1.2500
$1.2500 / $2.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 23
  • 1 $2.5000
  • 3 $2.0000
  • 11 $1.5000
$1.5000 / $2.5000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 28
  • 1 $3.2000
  • 3 $2.4000
  • 11 $2.0000
$2.0000 / $3.2000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 6
  • 1 $4.0000
  • 2 $3.0000
$3.0000 / $4.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 148
  • 1 $11.8976
  • 25 $9.7824
  • 103 $9.2537
$9.2537 / $11.8976 Buy Now
Chip 1 Exchange INSTOCK 350
RFQ
Chip1Cloud Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 16000
RFQ
Win Source Electronics Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 236000
  • 75 $0.7070
  • 175 $0.5800
  • 270 $0.5620
  • 370 $0.5440
  • 480 $0.5260
  • 640 $0.4710
$0.4710 / $0.7070 Buy Now

Part Details for IRF3710

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IRF3710 Part Data Attributes:

IRF3710 International Rectifier
Buy Now Datasheet
Compare Parts:
IRF3710 International Rectifier Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code TO-220AB
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 57 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 230 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3710

This table gives cross-reference parts and alternative options found for IRF3710. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3710, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3710 Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3710 vs IRF3710
Part Number Description Manufacturer Compare
IRF3710 Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3710 vs IRF3710

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