There are no models available for this part yet.
Overview of IRF3707PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRF3707PBF by International Rectifier
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| ComSIT USA | HEXFET SMPS POWER MOSFET Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant |
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RFQ |
CAD Models for IRF3707PBF by International Rectifier
Part Data Attributes for IRF3707PBF by International Rectifier
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Part Package Code
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TO-220AB
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Package Description
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LEAD FREE PACKAGE-3
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Pin Count
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3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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213 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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62 A
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Drain-source On Resistance-Max
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0.0125 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-220AB
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JESD-30 Code
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R-PSFM-T3
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JESD-609 Code
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e3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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87 W
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Pulsed Drain Current-Max (IDM)
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248 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
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MATTE TIN OVER NICKEL
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for IRF3707PBF
This table gives cross-reference parts and alternative options found for IRF3707PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3707PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB7030BL | N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ, 800-REEL | onsemi | IRF3707PBF vs FDB7030BL |
| IRF3707ZL | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | IRF3707PBF vs IRF3707ZL |
| IRF3707STRLPBF | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF3707PBF vs IRF3707STRLPBF |
| IRF3707Z | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRF3707PBF vs IRF3707Z |
| FDB6670SS62Z | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | IRF3707PBF vs FDB6670SS62Z |
| AP0903GMA | TRANSISTOR 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, APAK-5, FET General Purpose Power | Advanced Power Electronics Corp | IRF3707PBF vs AP0903GMA |
| FDB7030BL | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | IRF3707PBF vs FDB7030BL |
| FDB7030BL_NL | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | IRF3707PBF vs FDB7030BL_NL |
| IRF3707ZS | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Infineon Technologies AG | IRF3707PBF vs IRF3707ZS |
| IRL3103PBF | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRF3707PBF vs IRL3103PBF |