Part Details for IRF331 by Harris Semiconductor
Overview of IRF331 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF331
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF331-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 127 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4599 In Stock |
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$2.3700 | Buy Now |
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Rochester Electronics | 5.5A, 350V, 1.0 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4599 |
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$1.9400 / $2.2800 | Buy Now |
Part Details for IRF331
IRF331 CAD Models
IRF331 Part Data Attributes
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IRF331
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRF331
Harris Semiconductor
Power Field-Effect Transistor, 5.5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 80 ns | |
| Turn-on Time-Max (ton) | 46 ns |
Alternate Parts for IRF331
This table gives cross-reference parts and alternative options found for IRF331. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF331, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2N6760TX | Intersil Corporation | Check for Price | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF331 vs 2N6760TX |
| 2N6760 | Motorola Mobility LLC | Check for Price | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF331 vs 2N6760 |
| 2N6760 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | IRF331 vs 2N6760 |
| JANTXV2N6760 | Intersil Corporation | Check for Price | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, FORMERLY TO-3, 2 PIN | IRF331 vs JANTXV2N6760 |
| JANTXV2N6760 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | IRF331 vs JANTXV2N6760 |
| 2N6760 | Rochester Electronics LLC | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF331 vs 2N6760 |
| 2N6760 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | IRF331 vs 2N6760 |
| IRF332 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF331 vs IRF332 |