Part Details for IRF330 by Harris Semiconductor
Overview of IRF330 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF330
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 167 |
|
RFQ | ||
|
|
Quest Components | MOSFET Transistor, N-Channel, TO-204AA | 31 |
|
$7.1500 / $11.0000 | Buy Now |
Part Details for IRF330
IRF330 CAD Models
IRF330 Part Data Attributes
|
|
IRF330
Harris Semiconductor
Buy Now
Datasheet
|
Compare Parts:
IRF330
Harris Semiconductor
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 80 ns | |
| Turn-on Time-Max (ton) | 46 ns |
Alternate Parts for IRF330
This table gives cross-reference parts and alternative options found for IRF330. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF330, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF330 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | IRF330 vs IRF330 |
| IRF330 | IRF330 | Texas Instruments | IRF330 vs IRF330 |
| IRF330 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | FCI Semiconductor | IRF330 vs IRF330 |
| IRF330R1 | Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | IRF330 vs IRF330R1 |
| IRF330 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Samsung Semiconductor | IRF330 vs IRF330 |
| IRF330 | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | IRF330 vs IRF330 |
| IRF330 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | IRF330 vs IRF330 |
| IRF330R1 | 5.5A, 400V, 1.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF330 vs IRF330R1 |