Datasheets
IRF3205ZSPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF3205ZSPBF by International Rectifier

Overview of IRF3205ZSPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF3205ZSPBF

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IRF3205ZSPBF Part Data Attributes

IRF3205ZSPBF International Rectifier
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IRF3205ZSPBF International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 440 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3205ZSPBF

This table gives cross-reference parts and alternative options found for IRF3205ZSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205ZSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3205ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF3205ZSPBF vs IRF3205ZSTRR
IRF3205ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs IRF3205ZSTRLPBF
IRF3205ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs IRF3205ZS
IRF3205ZSPBF Power Field-Effect Transistor, Infineon Technologies AG IRF3205ZSPBF vs IRF3205ZSPBF
AUIRF3205ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs AUIRF3205ZSTRR
AUIRF3205ZSTRL Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs AUIRF3205ZSTRL
Part Number Description Manufacturer Compare
AUIRF3205ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs AUIRF3205ZSTRR
IRF3205ZS Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs IRF3205ZS
IRF3205ZSPBF Power Field-Effect Transistor, Infineon Technologies AG IRF3205ZSPBF vs IRF3205ZSPBF
IRF3205ZSTRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF3205ZSPBF vs IRF3205ZSTRRPBF
IRF3205ZSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF3205ZSPBF vs IRF3205ZSTRR
IRF3205ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF3205ZSPBF vs IRF3205ZSTRLPBF

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