Datasheets
IRF300P226 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IRF300P226 by Infineon Technologies AG

Overview of IRF300P226 by Infineon Technologies AG

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Price & Stock for IRF300P226

Part # Distributor Description Stock Price Buy
DISTI # 93AC7145
Newark Mosfet, N-Ch, 300V, 100A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:100A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF300P226 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 517
  • 1 $11.6600
  • 10 $8.4300
  • 25 $8.2000
  • 50 $7.3800
  • 100 $6.5400
  • 250 $6.5000
  • 800 $6.4500
$6.4500 / $11.6600 Buy Now
DISTI # 38AH8488
Newark Trench >=100V Rohs Compliant: Yes |Infineon IRF300P226 RoHS: Compliant Min Qty: 400 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $6.5500
  • 500 $6.5000
$6.5000 / $6.5500 Buy Now
DISTI # 448-IRF300P226-ND
DigiKey MOSFET N-CH 300V 100A TO247AC Min Qty: 1 Lead time: 16 Weeks Container: Tube 703
In Stock
  • 1 $10.2500
  • 25 $6.2404
  • 100 $5.2855
  • 500 $4.9494
$4.9494 / $10.2500 Buy Now
DISTI # IRF300P226
Avnet Americas Transistor MOSFET N-CH 300V 100A 2-Pin TO-247AC Tube - Rail/Tube (Alt: IRF300P226) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Container: Tube 8400
RFQ
DISTI # 726-IRF300P226
Mouser Electronics MOSFETs IFX OPTIMOS RoHS: Compliant 807
  • 1 $8.8900
  • 10 $8.7600
  • 25 $5.7000
  • 100 $4.9500
  • 400 $4.9400
$4.9400 / $8.8900 Buy Now
Future Electronics 300V 75A 19 mOhm N-ch TO-247 RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 16 Weeks Container: Tube 0
Tube
  • 25 $4.9900
  • 800 $4.8500
$4.8500 / $4.9900 Buy Now
Future Electronics 300V 75A 19 mOhm N-ch TO-247 RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Lead time: 16 Weeks Container: Tube 0
Tube
  • 25 $4.9900
  • 800 $4.8500
$4.8500 / $4.9900 Buy Now
DISTI # 69264166
Verical Trans MOSFET N-CH 300V 100A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 4 Package Multiple: 1 Date Code: 2234 Americas - 1368
  • 4 $10.3500
  • 10 $7.7125
  • 50 $7.2250
  • 100 $6.3875
  • 200 $5.9625
  • 800 $5.8125
$5.8125 / $10.3500 Buy Now
DISTI # 77258484
Verical Trans MOSFET N-CH 300V 100A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 3 Package Multiple: 1 Americas - 97
  • 3 $10.6625
  • 10 $10.5000
  • 50 $6.8375
$6.8375 / $10.6625 Buy Now
DISTI # IRF300P226
TME Transistor: N-MOSFET, StrongIRFET™, unipolar, 300V, 53A, 313W Min Qty: 1 0
  • 1 $8.8800
  • 10 $7.3900
  • 25 $6.8900
  • 100 $6.1400
  • 400 $6.0900
$6.0900 / $8.8800 RFQ
DISTI # C1S322000841080
Chip1Stop MOSFET RoHS: Compliant Container: Tube 1368
  • 1 $8.2800
  • 10 $6.1700
  • 50 $5.7800
  • 100 $5.1100
  • 200 $4.7700
  • 800 $4.6500
$4.6500 / $8.2800 Buy Now
DISTI # C1S322000724826
Chip1Stop StrongIRFET™ RoHS: Compliant Container: Tube 97
  • 1 $9.8300
  • 10 $6.8400
  • 50 $6.6300
$6.6300 / $9.8300 Buy Now
DISTI # SP001582442
EBV Elektronik Transistor MOSFET N-CH 300V 100A 2-Pin TO-247AC Tube (Alt: SP001582442) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF300P226

IRF300P226 CAD Models

IRF300P226 Part Data Attributes

IRF300P226 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF300P226 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1559 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 3.8 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 556 W
Pulsed Drain Current-Max (IDM) 375 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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